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WEBQorvo is among the few manufacturers with all the required packaging, Si and SiC expertise in one team to accomplish this. Finally, SiC MOSFETs are easier to control with gate resistors, while SiC cascodes have a limited control range, requiring the Qorvo approach of application tailored devices. These devices then offer best-in-class …
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WEBThe additional advantages the Qorvo SiC FETs bring are: SiC FETs in higher voltage classes (1200V or higher) enable higher operating frequencies when compared to Si IGBTs, which traditionally service this market segment but are generally sluggish and used only at lower frequencies, resulting in higher switching losses.
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WEBBlock Diagrams. Qorvo's UF3C170400B7S SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows for a true "drop-in replacement" to Si IGBTs, Si FETs, SiC MOSFETs or Si ...
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WEB100. $5.21. Buy. Qorvo's UJ3N065080K3S is a 650 V, 80 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS (ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS (ON) at VGS = 0 V is also ideal for current protection ...
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WEBAccording to Dries, Qorvo's acquisition of Active-Semi has triggered its interest in the power electronics field. The aim is now to offer a great diversification strategy by leveraging UnitedSiC's compound …
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WEBQorvo ® announced four 1200V silicon carbide (SiC) modules – two half-bridge and two full-bridge – in a compact E1B package with R DS(on) starting at 9.4mΩ. These highly efficient SiC modules are excellent solutions for electric vehicle (EV) charging stations, energy storage, industrial power supplies and solar power applications.
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WEBKey Features. Qorvo's UF3C170400K3S 1700 V, 410 mohm SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re ...
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WEBQorvo to Showcase Innovations in SPICE Simulation SiC Modules and Battery Management at APEC 2024: 01/31/2024 : Qorvo to Acquire Anokiwave: 01/31/2024 : Qorvo Announces Fiscal 2024 Third Quarter Financial Results: 01/24/2024 : Qorvo Boosts Performance in 750V EV Designs with Industry-leading SiC FET in D2PAK
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WEB"The acquisition of United Silicon Carbide expands Qorvo's reach into the markets for electric vehicles, industrial power, circuit protection, renewables and data …
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WEBQorvo's silicon carbide (SiC) diodes are high-performance Merged-PiN-Schottky (MPS) diodes with excellent IFSM (surge) ratings. With zero reverse recovery charge and 175°C maximum junction temperature, these 650 V, 1200 V and 1700 V Schottky diodes are ideally suited for high frequency and high efficiency power systems with minimum …
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WEBGREENSBORO, NC and AUBURN, MI – November 2, 2022 – Qorvo ® (Nasdaq: QRVO), a leading global provider of connectivity and power solutions, and SK Siltron CSS, a semiconductor wafer manufacturer, announced today they have finalized a multi-year supply agreement for silicon carbide (SiC) bare and epitaxial wafers. This …
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WEBPricing (1000-up, FOB USA) for the new 1200V Gen 4 SiC FETs range from $5.71 for the UF4C120070K3S, to $14.14 for the UF4SC120023K4S. All devices are available from authorized distributors. Qorvo's Silicon Carbide and power management products charge, power and control a wide range of industrial, commercial and …
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WEBFigure 3 Comparative performance FoMs of new 1200V Gen 4 SiC FETs with competing 1200V FETs. The 6 new 1200V SiC FETs are available in the UnitedSiC (now Qorvo ) free online design calculator tool . FET-Jet Calculator™, which can be used to evaluate device losses, converter efficiency, temperature rise, and identify optimal drive conditions.
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WEBGREENSBORO, NC – May 5, 2021 – Qorvo® (Nasdaq:QRVO), a leading provider of innovative RF solutions that connect the world, today announced financial results for the Company's fiscal 2021 fourth quarter ended April 3, 2021. On a GAAP basis, revenue for Qorvo's fiscal 2021 fourth quarter was $1.073 billion, gross margin was 49.3%, …
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WEBGreensboro, NC, March 20, 2023 – Qorvo ® (Nasdaq: QRVO), a leading global provider of connectivity and power solutions, will showcase a new surface-mount TO-leadless (TOLL) package for its high-performance, 5.4 milliohm (mΩ) 750V SiC FETs. This is the first product in a family of 750V SiC FETs that will be released in the TOLL package with on …
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WEBQorvo's UF3C120080B7S 1200 V, 85 mohm SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device s standard gate-drive characteristics allows for a true drop-in replacement to Si IGBTs, Si FETs, SiC MOSFETs or Si ...
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WEBand more on the Qorvo website: SiC power products: SiC FETs; SiC JFETs; SiC Diodes; SiC power resources: FET-Jet Calculator; SiC FET Design Tips; ... Qorvo Acquires United Silicon Carbide. If you have a specific need, please visit Qorvo's Support page or contact Qorvo Support by e-mail or by phone at +1.844.890.8163. Buy Products Now: In ...
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WEBOur SiC technology, together with Qorvo's complementary Programmable Power Management products and world-class supply chain capabilities, enable us to deliver superior levels of power efficiency ...
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WEBSiC JFETs. Qorvo's silicon carbide (SiC) JFETs are high-performance, normally-on JFET transistors, from 650 to 1700 V, with ultra-low on-resistance (RDS (on)) as low as 25 mohms. Gate charge (QG) is also low, allowing for low conduction and reduced switching loss. These products are also ideal for circuit protection applications. Key Features ...
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WEBGREENSBORO, NC – February 1, 2023 – Qorvo ® (Nasdaq:QRVO), a leading global provider of connectivity and power solutions, today announced financial results for the Company's fiscal 2023 third quarter ended December 31, 2022. On a GAAP basis, revenue for Qorvo's fiscal 2023 third quarter was $743 million, gross margin was 36.1%, …
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WEBOur SiC technology, together with Qorvo's complementary Programmable Power Management products and world-class supply chain capabilities, enable us to deliver superior levels of power efficiency ...
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WEBQorvo SiC FETs Come in Small Packages Company delivers first 750V Qorvo SiC FETs in TOLL package for high power. Learn More. 2023 March 7, 2023 First Single-Chip Battery Management Solution for 20s Qorvo unveils industry's first single-chip intelligent battery management solutions for 20-cell systems. ...
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WEBQSPICE is faster, has better graphing functions, and has an easy-to-understand user interface. Among the sample circuits, there are some that are excellent teaching materials for electronic circuit engineers. Qorvo has launched QSPICE™, a new generation of SPICE, the industry standard for analog and mixed signal simulation. Download QSPICE.
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WEBThe automotive cabin is undergoing technological renaissance—driven by consumer demands for aesthetics and safety. However, the smart surface, inspired by the smartphone, face challenges in adapting to the digital age. Learn how the auto industry has embraced force-sensing solutions to hone in-vehicle controls.
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WEB100. $5.21. Buy. Qorvo's UJ3N065080K3S is a 650 V, 80 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS (ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS (ON) at VGS = 0 V is also ideal for current protection ...
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WEBQorvo's high-performance silicon carbide (SiC) FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, standard thru-hole (including Kelvin) and surface mount packages, with excellent cost effectiveness. These FETs are based on a unique cascode configuration where a high-performance SiC fast JFET is co-packaged ...
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WEBQorvo announced today that it has acquired Princeton, New Jersey-based United Silicon Carbide (UnitedSiC), a leading manufacturer of silicon carbide (SiC) …
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WEBQorvo says QSPICE can reduce simulation run times and achieve a 100% completion rate. QSPICE can also help engineers analyze power integrity and noise in power management and mixed-signal designs where these are critical metrics, especially for SiC-based devices that operate at high frequencies. It simulates parasitic …
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WEBQorvo today announced seven 750V silicon carbide (SiC) FETs in the surface mount D2PAK-7L package. With this package option, Qorvo's SiC FETs are tailored for the rapidly growing applications of onboard chargers, soft-switched DC/DC converters, battery charging (fast DC and industrial) and IT/server power supplies.
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WEBGreensboro, NC, November 3, 2021 – Qorvo ® (Nasdaq: QRVO), a leading provider of innovative RF solutions that connect the world, announced today that it has acquired Princeton, New Jersey-based United Silicon Carbide (UnitedSiC), a leading …
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