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WEBWith an extended voltage range, from 650 to 2200 V, ST's silicon-carbide MOSFETs …
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WEBIn this whitepaper, on top of insights on both SiC and GaN, get a true feedback about which application types and conditions it makes sense to use SiC MOSFETs rather than traditional silicon devices in terms of performance and cost-effectiveness. ST produces SiC MOSFETs and diodes in very large volumes suiting a large spectrum of applications ...
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WEBJan 16, 2024. Wolchip News: On January 18, ST announced that it has partnered with Silicon Carbide (SiC) semiconductor power module manufacturer Zinsight Technology to provide ST's third ...
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WEBSTMicroelectronics 650 Silicon-Carbide (SiC) MOSFETs feature very low on-state resistance (R DS (on)) per area combined with excellent switching performance. This translates into more efficient and compact systems. Compared with silicon MOSFETs, SiC MOSFETs exhibit low on-state resistance per area even at high temperatures.
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WEBSTMicroelectronics has inked a long-term supply agreement for silicon carbide (SiC) with Li Auto, a market leader in China's new energy vehicle sector, according to the companies. ST will supply ...
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WEBDiscover our products around STPOWER SiC MOSFETs. Enter your code en: Validate Invalid code, please check the code sent to your email address and validate again.
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WEBThe STGAP2SICS from STMicroelectronics (ST) is a single gate, 4 amp SiC MOSFET driver that features a full 6kV of galvanic isolation, separating the low voltage control and interface section from …
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WEBSCTWA50N120 Series 1200 V 65 A Silicon carbide Power MOSFET - HiP-247 (TO-247-3) As low as: $27.96 (USD) Industry-leading 200 °C rating for more efficient and simplified designs. Based on the advanced and innovative properties of wide bandgap materials, ST's silicon carbide (SiC) MOSFET feature very low R DS (on) per area for the 1200 V ...
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WEBSTMicroelectronics Manufactures First 200mm Silicon … July 27, 2021 - STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, today announced it has manufactured the first 200mm (8-inch) Silicon-Carbide (SiC) bulk wafers for prototyping next-generation power devices …
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WEB= ST SIC Mosfet 650V/55mohm/H2Pack • S 1 / S 2 = ST M5 Series SI Mosfet: 650V/24mohm/TO247 • S 1 / S 2 = ST M5 Series SI Mosfet: 650V/41mohm/TO247 AC Gate driver or or S 1 S 2 Thanks to its exceptional R DS(on) *A, the SiC MOSFET solution for 3.6kW PFC can be housed in SMD packages, while Silicon needs Through-hole TO-247
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WEBST's product portfolio includes 650V half-bridge super-junction MDmesh DM6 MOSFETs in ACEPACK SMIT. These devices are AQG-324-qualified, which ensures high electrical efficiency and low thermal dissipation. They are tailored for DC/DC converters for both the OBC and the high-voltage to low-voltage section.
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WEB400V. High voltage DC-DC converter to boost battery voltage up, enabling operation of the traction motor within optimized voltage range. High voltage DC-DC converter for fast and reliable DC Charging in dual voltage domains reducing significantly the charging time of HEVs and EVs. STPOWER SiC MOSFET solutions from ST operate at higher switching ...
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WEBThis webinar was broadcasted Thursday, 17th September 2020. Watch now. How ST's 2nd-gen Silicon-Carbide MOSFETs take efficiency to a next level: 15 kW Power Factor Conversion reference design. Join ST's one-hour webinar and discover the key benefits of 2 nd generation STPOWER Silicon-Carbide MOSFETs specifically for a Power Factor …
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WEBThe latest breakthrough in high-voltage switching and rectification. STMicroelectronics Silicon Carbide (SiC) MOSFETs include 650 / 1200 V SiC MOSFETs featuring the industry's highest junction temperature rating of 200°C for more efficient and simplified designs. The portfolio also includes SiC diodes ranging from 600 to 1200 V, which ...
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WEBSCTWA70N120G2V-4. Out of Stock. Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package. RoHs compliant Ecopack2. Package Name HiP247-4. ECCN US EAR99. ECCN EU NEC. $32.95 | 500u. Data sheet.
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WEBOctober 24, 2021 by Gary Elinoff. The new unit is a galvanically isolated gate driver that can sink and source up to 4 amps at voltages up to 26V. STMicroelectronics' (ST) STGAP2SiCSN is available in two versions, one with separate outputs, allowing for the optimization of MOSFET turn-on and turn-off times. Configuration of the STGAP2SiCSN ...
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WEBJurors also found STMicroelectronics induced infringement of Purdue's patent US Patent No. 7,498,633. Purdue sued Netherlands-based STMicroelectronics and its US subsidiary in July 2021, accusing it of creating and selling many products that infringe the '633 patent, such as its STPower SiC MOSFET silicon-carbide transistors ...
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WEBSTMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the wide spectrum of electronics applications, has announced a collaboration with Compuware Technology Inc, (Compuware), a leading provider of high-efficiency power supplies, on a reference design for server power using ST's industry …
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WEBThe main features of our SiC MOSFETs include: Automotive-grade (AG) qualified devices. Very high temperature handling capability (max. T J = 200 °C) Very high switching frequency operation and very low switching losses. Low on-state resistance. Gate drive compatible with existing ICs. Very fast and robust intrinsic body diode.
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WEBDescription. The STGAP2SICS is a single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry. The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high power applications such as power conversion and ...
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WEBSemiconductor company STMicroelectronics has introduced new silicon carbide (SiC) power modules. With five new module variants, OEMs are to be offered flexible options. The Hyundai Motor Group is the first customer on board. The Koreans use SiC technology in the Kia EV6, among others. The five power modules are based on the …
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WEBST's portfolio of silicon carbide devices incluses STPOWER SiC MOSFETs ranging from 650 to 1700 V with the industry's highest junction temperature rating of 200 °C for more efficient and simplified designs, and STPOWER SiC diodes ranging from 600 to 1200 V which feature negligible switching losses and 15% lower forward voltage (VF) than …
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WEBST currently has a more 50% share of the SiC MOSFET market. "The SiC supply agreement with Li Auto marks a significant step building upon our existing long-term relationship in other automotive applications," said Henry CAO, Executive Vice President of Sales & Marketing, China Region, STMicroelectronics. "ST is committed to supporting …
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WEBThe real breakthrough in high voltage switching. Based on the advanced and innovative properties of wide bandgap materials, ST's STPOWER SiC MOSFETs feature very low R DS (on) per area, with the new SCT*N65G2 650 V and the new SCT*N120G2 1200 V product family, combined with excellent switching performance, reserve efficient and …
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WEBDiscover our products around SiC MOSFETs . Enter your code en: Validate Invalid code, please check the code sent to your email address and validate again.
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WEBSTMicroelectronics is supplying its third-generation silicon-carbide (SiC) MOSFET technology for the e-compressor controllers of ZINSIGHT Technology, a Chinese company focusing on SiC power modules and advanced electric power conversion systems for new energy vehicles (NEVs).
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WEBNew highly versatile 650 V STPOWER SiC MOSFET in 4-lead HiP247 package. Enabling excellent switching performance thanks to its source sensing pin, the SCTWA35N65G2V-4 covers a wide range of industrial …
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WEBSTMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, has released high-power modules for electric vehicles that boost performance and driving range.ST's new silicon-carbide (SiC) power modules have been selected for Hyundai's E-GMP electric-vehicle …
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WEBSTMicroelectronics (ST) has signed a long-term silicon carbide (SiC) supply agreement with Li Auto, under which ST will provide Li Auto with SiC MOSFET devices to support its strategy around high-voltage battery electric vehicles (BEVs) in various market segments.
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WEBST SiC MOSFETs allow the design of more efficient and compact systems. …
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