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WEBThe emergence of medium-voltage silicon carbide (SiC) power semiconductor devices, in ranges of 10–15 kV, has led to the development of simple two-level converter systems for medium-voltage applications. A medium-voltage mobile utility support equipment-based three-phase solid state transformer (MUSE-SST) system, based on Gen3 10 kV SiC …
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WEBA 10kV/200A SiC MOSFETs module is fabricated based on this hybrid topology with thirty-six 1200V/40A SiC MOSFET chips. The dynamic switching behavior of the module is tested and analyzed at 5400V ...
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WEBAbstract: Advanced high-voltage (10 kV-15 kV) silicon carbide (SiC) power MOSFETs described in this paper have the potential to significantly impact the system …
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WEBThis paper reports a comprehensive analysis of three phase converter enabled by 10kV SiC based XHV-6 modules. A thorough explanation of converter based upon 10kV XHV-6 module has been carried out. The gate driver and converter structure used for carrying out the test have been explained in details. The assessment of MOSFET modules have …
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WEBFor the first time, we present the full characteristics of a newer generation 10kV, 340mOmega SiC MOSFET and 10kV, 15A SiC diode chip set and discuss target applications. The 8.1mm x 8.1mm 10kV SiC MOSFET die was measured to have record low specific RDSON of 100mOmega- cm2 at 25deg C, 15A current rating, and only …
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WEBAbstract: This paper presents the characterization of the temperature-dependent short-circuit performance of a Gen3 10 kV/20 A silicon carbide (SiC) mosfet. The test platform consisting of a phase-leg configuration and a fast speed 10-kV solid state circuit breaker, with temperature control, is introduced in detail.
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WEBDOI: 10.23919/ien.2022.0001 Corpus ID: 248357986; Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter @article{Mocevic2022DesignOA, title={Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter}, author={Slavko …
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WEBThis article presents the design and testing of a 10-kV SiC mosfet power module that switches at a record 250 V/ns without compromising the signal and ground …
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WEBIn the current paper, we propose a complete sizing of the power supply and we justify the choice of each component, notably the 10kV SiC MOSFETs and diodes, as presented in Section 3. The experimental setup, performance analysis, notably through a power balance, and results are discussed in Section 3 and Section 4 .
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WEBThe results show that the improved wire layout reduces the wire temperature by 2.2-5.3% compared to the conventional design. This is expected to increase the power cycle capability by up to 31%, according to predictions based on the Coffin-Manson model. Keywords— —10 kV SiC MOSFET, power module, digital design, 3D thermal …
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WEBSolid state transformers (SSTs) are evolved as an emerging technology which offer several key features in integrating different grids, storage devices, and renewable energy sources, etc. In this paper, a 10 kV SiC MOSFET enabled Mobile Utility Support Equipment based SST (MUSE-SST) is presented for integrating a medium voltage (MV) AC grid (4.16 kV …
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WEBTherefore, this paper proposes a 10 kV SiC MOSFET-based single-cell two-stage 25 kW, 3:8 kV single-phase AC to 400 V DC SST (cf. Fig. 1) and provides a detailed analysis and experimental verification of the isolated 7 kV to 400 V DC/DC converter stage. The associated soft-switching 3:8 kV AC to 7 kV DC PFC converter has been presented in [1 ...
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WEBIn the hardware design of battery energy storage system (BESS) interface, in order to meet the high-voltage requirement of grid side, integrating 10-kV silicon-carbide (SiC) MOSFET into the interface could simplify the topology by reducing the component count.
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WEB•Boost-buck at 3.75kW for 30 min - Switching test of 10kV SiC MOSFET at 5kV •Boost input is 1.25kV and output is 5kV. The boost duty is 25% • 30 min thermal run at 5kV and 3.75 kW power • sp1 pointer near high side IGBT • Desat-sensing, V ds (on), T mod and I …
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WEBDiscrete Silicon Carbide MOSFETs. Wolfspeed Silicon Carbide (SiC) MOSFETs enable higher switching frequencies and reduce the size of components like inductors, capacitors, filters & transformers. Our Silicon Carbide MOSFETs replace silicon devices to enable lower switching and conduction losses with higher blocking voltages and avalanche ...
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WEBPossible applications fo r 10kV SiC MOSFETs incl ude solid-state trans formers, HVDC converters, inverters for wind turbin es connected directly to M V distribution lines and many more [2–3]. How-
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WEBHigh-density packaging of fast-switching power semiconductors typically requires low thermal resistance and parasitic inductance. High-density packaging of high-voltage semiconductors, such as 10 kV SiC MOSFETs, has the added challenge of maintaining low electric field concentration in order to prevent premature dielectric breakdown. This work …
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WEBThe module has a power-loop inductance of 16 nH, and a power density of 4.2 W/mm3 [15]; though, to date, few details have been published on the module design. This work will present the detailed ...
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WEBfast switching high-voltage MOSFETs. This paper presents an accurate and reliable calorimetric method for the measurement of soft-switching losses using the example of 10kV SiC MOSFETs. Finally, measured soft-switching loss curves of these 10kV SiC MOSFETs are presented for different DC-link voltages, currents and gate resistors. I. …
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WEBA 5 kV-input power extracting converter based on a voltage-balanced SiC MOSFET stack is constructed to self-power the gate driver, which exhibits simplification of basic topology and sufficient ...
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WEBVoltage 7kV / 400V 10kV / 340V 6kV / 400V Frequency 48kHz 37kHz 40kHz Switches HV SiC HV SiC HV SiC Density 3.8kW/dm3 1.5kW/dm3 n/a Efficiency 99.0% 97.3% 97.4% …
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WEB10kV SiC MOSFETS have the capability to replace 6.5kV Si-IGBTs at the medium voltage level. The research paper focuses on the design of three phase converter enabled by …
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WEB1. I agree, it is quite complicated to get a good voltage distribution across all MOSFETs during turn-on and turn-off. Furthermore 10 kV is high voltage and one needs to be extremely careful with such voltage levels, which can be deadly. – Ken Grimes.
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WEB10kV SiC for SSTs Future Research Areas. 69/71. Si Multi-Cell vs. SiC Single Stage. Input 2.4kV AC 3.8kV AC Output 54V DC 400V DC Power 25kW 25kW Cells 5x 1x Technology LV Si HV SiC Semiconductors 100x 10x Transformer 10x 1x Density 0.4-0.8 kW/dm31.8 kW/dm3. Efficiency 96.0% 98.1%.
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WEBAbstract: For the first time, we present the full characteristics of a newer generation 10kV, 340mOmega SiC MOSFET and 10kV, 15A SiC diode chip set and …
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WEB10-kV silicon carbide (SiC) MOSFETs are currently being developed by a number of organizations in the U.S. with prospective applications in high-voltage and high-frequency power-electronic systems. The aim of this paper is to demonstrate the high-frequency and high-temperature capability of 10-kV SiC MOSFETs in the application of a dc/dc boost …
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WEBThree level, three phase DC-DC converter topology with series connected Gen 3 10kV SiC MOSFETs is used to implement the proposed DAB converter to obtain a 24kV DC bus. The design specifications of proposed DAB converter is described in detail. Large signal modelling for the three level and three phase DAB converter with a non-linear …
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WEBSimultaneously imposed challenges of high-voltage insulation, high dv/dt, high-switching frequency, fast protection, and thermal management associated with the …
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WEBThe short-circuit behavior of power devices is highly relevant for converter design and fault protection. In this paper, the degradation during short circuit of a 10-kV 10-A 4H-SiC MOSFET is investigated at 6 kV dc-link voltage. The study aims to present the behavior of the device during short-circuit transients as it sustains increasing short …
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