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WEBBlock Diagrams. Qorvo's UF3C170400B7S SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows for a true "drop-in replacement" to Si IGBTs, Si FETs, SiC MOSFETs or Si ...
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WEBQorvo's UF3C120150K4S 1200 V, 150 mohm SiC FET products co-package its high-performance F3 SiC fast JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247 package and the best reverse recovery characteristics of any …
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WEBQorvo's silicon carbide (SiC) diodes are high-performance Merged-PiN-Schottky (MPS) diodes with excellent IFSM (surge) ratings. With zero reverse recovery charge and 175°C maximum junction temperature, these 650 V, 1200 V and 1700 V Schottky diodes are ideally suited for high frequency and high efficiency power systems with minimum …
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WEBQorvo has expanded its SiC solutions portfolio with the introduction of four 1200-V silicon carbide (SiC) modules—two half-bridge and two full-bridge—in a compact E1B package with R DS(on) starting at 9.4 mΩ. These SiC modules target electric vehicle (EV) charging stations, energy storage, industrial power supplies and solar power …
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WEBQorvo Introduces 1200V SiC Modules in Compact E1B Package: 02/07/2024 : Qorvo to Showcase Innovations in SPICE Simulation SiC Modules and Battery Management at APEC 2024: 01/31/2024 : Qorvo …
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WEBQorvo Introduces 1200V SiC Modules in Compact E1B Package: 02/07/2024 : Qorvo to Showcase Innovations in SPICE Simulation SiC Modules and Battery Management at APEC 2024: 01/31/2024 : Qorvo to Acquire Anokiwave: 01/31/2024 : Qorvo Announces Fiscal 2024 Third Quarter Financial Results: 01/24/2024
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WEBNovember 4, 2021– Qorvo ® (Nasdaq: QRVO), a leading provider of innovative RF solutions that connect the world, has announced that it has acquired Princeton, New Jersey-based United Silicon Carbide (UnitedSiC), a leading manufacturer of silicon carbide (SiC) power semiconductors. The acquisition of United Silicon Carbide expands Qorvo's …
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WEBQorvo is among the few manufacturers with all the required packaging, Si and SiC expertise in one team to accomplish this. Finally, SiC MOSFETs are easier to control with gate resistors, while SiC cascodes have a limited control range, requiring the Qorvo approach of application tailored devices. These devices then offer best-in-class …
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WEBMay 11, 2022 – Qorvo ® (Nasdaq:QRVO), a leading provider of innovative RF solutions that connect the world, today announced a next-generation series of 1200V Silicon …
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WEBApplication Notes. For new and experienced users of SiC power products, we provide the following application notes and other technical documents to assist your design efforts. In addition, be sure to check out the product-specific documents (including data sheets) that can be found on the individual product pages under the Documents tab.
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WEBQorvo announced today that it has acquired Princeton, New Jersey-based United Silicon Carbide (UnitedSiC), a leading manufacturer of silicon carbide (SiC) …
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WEBGREENSBORO, NC and AUBURN, MI – November 2, 2022 – Qorvo ® (Nasdaq: QRVO), a leading global provider of connectivity and power solutions, and SK Siltron CSS, a semiconductor wafer manufacturer, announced today they have finalized a multi-year supply agreement for silicon carbide (SiC) bare and epitaxial wafers. This …
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WEBQorvo announced that it has acquired Princeton, N.J.,-based United Silicon Carbide (UnitedSiC), expanding Qorvo's reach into electric vehicles, industrial power, …
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WEBNovember 4, 2021– Qorvo® (Nasdaq: QRVO), a leading provider of innovative RF solutions that connect the world, has announced that it has acquired Princeton, New …
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WEBQorvo's UJ3D1220K2 is a 20 A, 1200 V SiC Merged PiN Schottky (MPS) diode in a TO-247-2L package. With zero reverse recovery charge and 175 C maximum junction temperature, this diode is ideally suited for high frequency and high efficiency power systems with minimum cooling requirements.
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WEBAccording to Dries, Qorvo's acquisition of Active-Semi has triggered its interest in the power electronics field. The aim is now to offer a great diversification strategy by leveraging UnitedSiC's compound semiconductor manufacturing. "The programmable power business is growing very rapidly and Qorvo wants a bigger footprint in power.
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WEB100. $5.21. Buy. Qorvo's UJ3N065080K3S is a 650 V, 80 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS (ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS (ON) at VGS = 0 V is also ideal for current protection ...
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WEBGREENSBORO, NC – January 24, 2022 – Qorvo ® (Nasdaq:QRVO), a leading provider of innovative RF solutions that connect the world, today announced a motor control reference design that features the PAC5556 intelligent motor controller with Qorvo's new silicon carbide (SiC) FETs into a proof of concept System-on-a-Chip (SoC) to drive ...
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WEBBased on a unique cascode configuration, the recently announced Generation 4 SiC FETs are specified at an industry-leading 750V at 5.9 milliohm RDS(on), enabling new levels of SiC efficiency and ...
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WEBQSPICE is faster, has better graphing functions, and has an easy-to-understand user interface. Among the sample circuits, there are some that are excellent teaching materials for electronic circuit engineers. Qorvo has launched QSPICE™, a new generation of SPICE, the industry standard for analog and mixed signal simulation. Download QSPICE.
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WEBDelivered. With R DS (on) ranging from 5.4 to 60 mohm in the 750V UJ4C/SC series and 23 to 70 mohm in the 1200V UF4C/SC series, our Gen 4 SiC FETs provide automotive, renewables, and broad industrial power …
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WEBSiC FETs; SiC JFETs; SiC Diodes; SiC power resources: FET-Jet Calculator; SiC FET Design Tips; Part Number Decoder; Application Notes & User Guides; White Papers; …
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WEBQuality matters at Qorvo. Our commitment to customers is to provide quality products and services every time. We have achieved ISO 9001, ISO 14001, ISO 45001, ISO 50001, IATF 16949 and AS9100 certifications that demonstrate our focus on delivering exceptional quality, reliability and performance for our customers.
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WEBGREENSBORO, N.C., Nov. 03, 2021 (GLOBE NEWSWIRE) -- Qorvo ® (Nasdaq: QRVO), a leading provider of innovative RF solutions that connect the world, announced today …
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WEBGREENSBORO, N.C., Nov. 03, 2021 (GLOBE NEWSWIRE) -- Qorvo® (Nasdaq: QRVO), a leading provider of innovative RF solutions that connect the world, announced today that it has acquired Princeton ...
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WEBQorvo's high-performance silicon carbide (SiC) FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, standard thru-hole (including Kelvin) and surface mount packages, with excellent cost effectiveness. These FETs are based on a unique cascode configuration where a high-performance SiC fast JFET is co-packaged ...
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WEBOverview. Qorvo's UF3SC120009K4S 1200 V, 8.6 mohm SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows for a true "drop-in replacement" to Si IGBTs, Si FETs, SiC ...
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WEBQorvo has acquired Princeton, N.J.-based United Silicon Carbide (UnitedSiC), a manufacturer of silicon carbide (SiC) power semiconductors. The acquisition of United Silicon Carbide expands …
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WEBQorvo to Showcase Innovations in SPICE Simulation SiC Modules and Battery Management at APEC 2024: 01/31/2024 : Qorvo to Acquire Anokiwave: 01/31/2024 : Qorvo Announces Fiscal 2024 Third Quarter Financial Results: 01/24/2024 : Qorvo Boosts Performance in 750V EV Designs with Industry-leading SiC FET in D2PAK
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WEBQorvo ® announced four 1200V silicon carbide (SiC) modules – two half-bridge and two full-bridge – in a compact E1B package with R DS (on) starting at 9.4mΩ. These highly efficient SiC modules are excellent solutions for electric vehicle (EV) charging stations, energy storage, industrial power supplies and solar power applications.
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