- +8618437960706
- دوشنبه تا شنبه: 10:00 - 16:00 / یکشنبه تعطیل است
WEBSiC: Silicon carbide. for a more sustainable future. STMicroelectronics introduced its first SiC diodes in 2004, after several years of research and development on silicon carbide …
به خواندن ادامه دهید
WEBSTMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, will build an integrated Silicon Carbide (SiC) substrate manufacturing facility in Italy to support the increasing demand from ST's customers for SiC devices across automotive and industrial applications as they …
به خواندن ادامه دهید
WEBThis report presents a power essentials folder (PEF) of the STMicroelectronics SCT040H65G3AG automotive 3rd generation 650 V SiC MOSFET. It is AEC-Q101 qualified, building on ST's established market presence in EV drivetrain inverters, with low Rds(on) increase up to 175 C, and packaged in low profile surface …
به خواندن ادامه دهید
WEBSTMicroelectronics 650 Silicon-Carbide (SiC) MOSFETs feature very low on-state resistance (R DS(on)) per area combined with excellent switching performance. This translates into more efficient and compact systems. Compared with silicon MOSFETs, SiC MOSFETs exhibit low on-state resistance per area even at high temperatures.
به خواندن ادامه دهید
WEBThe SiC MOSFET is of particular interest, due to its potential to displace existing silicon super junction (SJ) transistor and integrated gate bipolar transistor (IGBT) technology. The semiconductor device potential of silicon carbide has been known for many years. In 1962 Lloyde Wallace at Westinghouse patented ( US3254280A ), a silicon ...
به خواندن ادامه دهید
WEBOrder STPOWER SiC MOSFETs direct from STMicroelectronics official eStore. Prices and availability in real-time, fast shipping. Find the right STPOWER SiC MOSFETs for your next design. ... Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package . Save to my list Compare. RoHs compliant Ecopack1;
به خواندن ادامه دهید
WEBJan 16, 2024. Wolchip News: On January 18, ST announced that it has partnered with Silicon Carbide (SiC) semiconductor power module manufacturer Zinsight Technology to provide ST's third ...
به خواندن ادامه دهید
WEB800 V, 850 V, 900 V, 950 V, 1050 V, 1200 V, 1500 V, 1700 V. The best cost/performance trade-off, suitable for a broad range of power applications. The right super-junction for high efficiency: enabler for resonant converters and soft switch applications. The perfect option for outstanding RDS(on), compact solution, enabler of high-power PFC.
به خواندن ادامه دهید
WEBSCTWA50N120 Series 1200 V 65 A Silicon carbide Power MOSFET - HiP-247 (TO-247-3) As low as: $27.96 (USD) Industry-leading 200 °C rating for more efficient and simplified designs. Based on the advanced and innovative properties of wide bandgap materials, ST's silicon carbide (SiC) MOSFET feature very low R DS (on) per area for the 1200 V ...
به خواندن ادامه دهید
WEBSTの650Vおよび1700V SiC（シリコン･カーバイド）MOSFETは、ワイド･バンドギャップのかつなにより、きわめていとれたスイッチングをえています。よりかつのシステムをします。
به خواندن ادامه دهید
WEBSTPOWER SiC MOSFET is the innovative solution for a more compact and efficient design, ST is extending the benefits of new wide bandgap materials to mass production. A wide voltage range selection is available 650V, 1200V and 1700V. STPOWER SiC MOSFETs feature very low on-state resistance R DS (on) and are suitable for different applications ...
به خواندن ادامه دهید
WEBPower MOSFET Applications. STの パワーMOSFET ポートフォリオは、-100V～1700Vというのブレークダウンをするだけでなく、のパッケージにいゲートとオンをねえています。. STのプロセスでは、MDmesh™パワーMOSFETと ...
به خواندن ادامه دهید
WEBHigh creepage version (1700V) in development. Unique Solution for traction Inverter. AG qualified at 200dC. Very High thermal dissipation efficiency. Sense pin for optimized driving. Multi-sintered package. WLBI & KGD. T&R or RWF options. Compliant with the most stringent Automotive Quality Requirements.
به خواندن ادامه دهید
WEBSTMicroelectronics SiC MOSFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for STMicroelectronics SiC MOSFET. Skip to Main Content (800) 346-6873. Contact Mouser (USA) (800) 346-6873 | Feedback. Change Location. English. Español $ USD United States.
به خواندن ادامه دهید
WEB3.1 Installation. In the package model, there are the following files: name.lib text file representing the model library written as a Spice code; name.olb symbol file to use the model into Orcad capture user interface. In Capture open the menu dialog window "Pspice" "Edit Simulation Profile". Go to "Configuration Files" tab and "Library" category.
به خواندن ادامه دهید
WEBSTMicroelectronics SiC MOSFETs, in mass production since 2014, offer an extended range of voltage, rating from 650 to 1700 V and higher in the near future. ... It helps you to design an innovative topology with the latest ST power kit devices: a silicon carbide MOSFET (SCTW35N65G2V), a thyristor SCR (TN3050H-12WY), an isolated FET driver ...
به خواندن ادامه دهید
WEBAn extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R DS (on) per area Figure Of …
به خواندن ادامه دهید
WEBstのsicポートフォリオには、クラスの（vf）をとするダイオードをむ600v / 1200vのsicダイオード、およびクラスの200℃のをとする650v / 750v / 900v / 1200v / 1700vのsic mosfetがまれており、かつシンプルなをにします。
به خواندن ادامه دهید
WEBThe main features of our SiC MOSFETs include: Automotive-grade (AG) qualified devices. Very high temperature handling capability (max. T J = 200 °C) Very high switching …
به خواندن ادامه دهید
WEBThe latest breakthrough in high-voltage switching and rectification. STMicroelectronics Silicon Carbide (SiC) MOSFETs include 650 / 1200 V SiC MOSFETs featuring the …
به خواندن ادامه دهید
WEBGen2 SiC MOSFET driving requirements need a gate bias voltage of +18 V to obtain the proper RDS(on) with lower drive loss. It is also possible to reduce this to +15 V, but this increases the RDS(on) by about 80% at 20 A and 25 °C. Table 1. Absolute maximum ratings and on/off states.
به خواندن ادامه دهید
WEBContents • Silicon Carbide at STMicroelectronics • SiC MOSFET - Technology roadmap • Gen 2 SiC MOS Technology • STGAP2S Isolated Gate Driver • Practical Example
به خواندن ادامه دهید
WEBSemiconductor company STMicroelectronics has introduced new silicon carbide (SiC) power modules. With five new module variants, OEMs are to be offered flexible options. The Hyundai Motor Group is the first customer on board. The Koreans use SiC technology in the Kia EV6, among others. The five power modules are based on the …
به خواندن ادامه دهید
WEBSTMicroelectronics is supplying its third-generation silicon-carbide (SiC) MOSFET technology for the e-compressor controllers of ZINSIGHT Technology, a Chinese company focusing on SiC power modules and advanced electric power conversion systems for new energy vehicles (NEVs). These highly efficient controllers offer several benefits …
به خواندن ادامه دهید
WEBSTMicroelectronics STPOWER SiC MOSFETs The real breakthrough in high voltage switching. Based on the advanced and innovative properties of wide bandgap materials, ST's STPOWER SiC MOSFETs feature very low R DS(on) per area, with the new SCT*N65G2 650 V and the new SCT*N120G2 1200 V product family, combined with …
به خواندن ادامه دهید
WEB09 December 2021. STMicroelectronics is introducing its third generation of STPOWER silicon-carbide (SiC) MOSFETs for power control for electric-vehicle (EV) powertrains and other applications where power density, energy efficiency, and reliability are critical. The market leader in SiC power MOSFETs, ST has incorporated new and advanced design ...
به خواندن ادامه دهید
WEBSTMicroelectronics (ST) has signed a long-term silicon carbide (SiC) supply agreement with Li Auto, under which ST will provide Li Auto with SiC MOSFET devices to support its strategy around high-voltage battery electric vehicles (BEVs) in various market segments.
به خواندن ادامه دهید
WEBAn extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R DS (on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. ST's 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved …
به خواندن ادامه دهید