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WEB100. $5.21. Buy. Qorvo's UJ3N065080K3S is a 650 V, 80 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS (ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS (ON) at VGS = 0 V is also ideal for current protection ...
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WEBQuality matters at Qorvo. Our commitment to customers is to provide quality products and services every time. We have achieved ISO 9001, ISO 14001, ISO 45001, ISO 50001, IATF 16949 and AS9100 certifications that demonstrate our focus on delivering exceptional quality, reliability and performance for our customers.
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WEBQorvo has acquired Princeton, N.J.-based United Silicon Carbide (UnitedSiC), a manufacturer of silicon carbide (SiC) power semiconductors. The …
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WEBQorvo's high-performance silicon carbide (SiC) FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, standard thru-hole (including Kelvin) and …
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WEBApplication Notes. For new and experienced users of SiC power products, we provide the following application notes and other technical documents to assist your design efforts. In addition, be sure to check out the product-specific documents (including data sheets) that can be found on the individual product pages under the Documents tab.
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WEBGreensboro, NC, November 3, 2021 – Qorvo ® (Nasdaq: QRVO), a leading provider of innovative RF solutions that connect the world, announced today that it has acquired …
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WEBNovember 4, 2021– Qorvo ® (Nasdaq: QRVO), a leading provider of innovative RF solutions that connect the world, has announced that it has acquired Princeton, New Jersey-based United Silicon Carbide (UnitedSiC), a leading manufacturer of silicon carbide (SiC) power semiconductors. The acquisition of United Silicon Carbide expands Qorvo's …
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WEBGREENSBORO, N.C., Nov. 03, 2021 (GLOBE NEWSWIRE) -- Qorvo ® (Nasdaq: QRVO), a leading provider of innovative RF solutions that connect the world, announced today …
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WEBThe Qorvo FET uses a vertical SiC JFET with much lower RdsA than lateral GaN FETs, even at 650 V. It can also be extended to much higher voltage ratings. The cascode device also uses a specialized custom LV MOSFET to simplify FET operation and offer gate drive compatibility with all existing SiC MOS and Si IGBT/MOS switches.
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WEBQorvo SiC FETs Come in Small Packages Company delivers first 750V Qorvo SiC FETs in TOLL package for high power. Learn More. 2023 March 7, 2023 First Single-Chip Battery Management Solution for 20s Qorvo unveils industry's first single-chip intelligent battery management solutions for 20-cell systems. ...
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WEBOver multiple decades, Qorvo has built and delivered the industry's best RF products, all based on deep manufacturing and compound semiconductor expertise. Now, Qorvo is strengthening its portfolio with best-in-class smart power management and SiC power products. Our goal is to always build the most intelligent, efficient power solutions that …
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WEBDelivered. With R DS (on) ranging from 5.4 to 60 mohm in the 750V UJ4C/SC series and 23 to 70 mohm in the 1200V UF4C/SC series, our Gen 4 SiC FETs provide automotive, renewables, and broad industrial power supply designers with the industry's best performance in multiple packaging options, enabling flexibility that delivers the optimum …
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WEBQorvo's silicon carbide (SiC) diodes are high-performance Merged-PiN-Schottky (MPS) diodes with excellent IFSM (surge) ratings. With zero reverse recovery charge and 175°C maximum junction temperature, these 650 V, 1200 V and 1700 V Schottky diodes are ideally suited for high frequency and high efficiency power systems with minimum …
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WEBMay 11, 2022 – Qorvo ® (Nasdaq:QRVO), a leading provider of innovative RF solutions that connect the world, today announced a next-generation series of 1200V Silicon …
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WEBSeptember 14, 2021, Princeton, New Jersey — UnitedSiC [Now Qorvo], a leading manufacturer of silicon carbide (SiC) power semiconductors, has responded to the power designer's requests for higher-performance, higher-efficient SiC FETs with the announcement of the industry's best 750V, 6mohm device. At a RDS (on) value of less …
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WEBQorvo's UJ3C120070K4S is a 1200 V, 70 mohm Gen 3 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows for a true "drop-in replacement" to Si IGBTs, Si FETs, SiC …
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WEBبین المللی. نرخ پاسخگویی: 0.00%. زمان پاسخگویی: -. مشاهده جزئیات. تأمین کنندگان، تولیدکنندگان، صادرکنندگان، توزیع کنندگان، فروشندگان معتبر مواد شیمیایی و عمده فروشان فعال در شیمیکو را اینجا ...
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WEBQorvo's high-performance silicon carbide (SiC) FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, standard thru-hole (including Kelvin) and surface mount packages, with excellent cost effectiveness. These FETs are based on a unique cascode configuration where a high-performance SiC fast JFET is co-packaged ...
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WEBپترو آینده. عرضه کننده بهترین آنالایزرها، ابزاردقیق، اتوماسیون و برق صنعتی در کشور. تأمین کننده تجهیزات اندازه گیری از بازارها و برندهای معتبر جهان. لیست محصولات برندهای قابل تأمین.
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WEBThis 750V SiC FET is the first in a new family of pin-compatible SiC FETs from Qorvo with R DS (on) options up to 60mΩ, making them well suited for electric vehicle (EV) applications, including on-board chargers, DC/DC converters and positive temperature coefficient (PTC) heater modules. The UJ4SC075009B7S features a 9mΩ typical R DS …
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WEBGREENSBORO, NC – May 5, 2021 – Qorvo® (Nasdaq:QRVO), a leading provider of innovative RF solutions that connect the world, today announced financial results for the Company's fiscal 2021 fourth quarter ended April 3, 2021. On a GAAP basis, revenue for Qorvo's fiscal 2021 fourth quarter was $1.073 billion, gross margin was 49.3%, …
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WEBBased on a unique cascode configuration, the recently announced Generation 4 SiC FETs are specified at an industry-leading 750V at 5.9 milliohm RDS(on), enabling new levels of SiC efficiency and ...
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WEBQorvo announced that it has acquired Princeton, N.J.,-based United Silicon Carbide (UnitedSiC), expanding Qorvo's reach into electric vehicles, industrial power, …
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WEBQorvo offers the largest portfolio of GaN/GaAs foundry processes as well as advanced GaAs/GaN process access to the US DoD. Qorvo has an ongoing commitment to innovation that extends to our key partners. ... • 0.15-micron GaN on SiC; 100mm wafers; DC-40 GHz applications with drain bias up to 28 V • Production Release 2013 • …
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WEBGREENSBORO, NC – January 24, 2022 – Qorvo ® (Nasdaq:QRVO), a leading provider of innovative RF solutions that connect the world, today announced a motor control reference design that features the PAC5556 intelligent motor controller with Qorvo's new silicon carbide (SiC) FETs into a proof of concept System-on-a-Chip (SoC) to drive ...
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WEBQorvo says QSPICE can reduce simulation run times and achieve a 100% completion rate. QSPICE can also help engineers analyze power integrity and noise in power management and mixed-signal designs where these are critical metrics, especially for SiC-based devices that operate at high frequencies. It simulates parasitic …
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WEBQorvo's portfolio of highly integrated silicon carbide (SiC) power modules feature multiple 1200V FETs in easy-to-use E1B packaging. These FETs leverage Qorvo's unique cascode configuration where a high-performance SiC JFET is co-packaged with a cascode optimized Si-MOSFET, thereby reducing RDS(on), switching loss, and thermal resistance, while …
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WEBSiC FETs; SiC JFETs; SiC Diodes; SiC power resources: FET-Jet Calculator; SiC FET Design Tips; Part Number Decoder; Application Notes & User Guides; White Papers; …
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WEBQorvo ® announced four 1200V silicon carbide (SiC) modules – two half-bridge and two full-bridge – in a compact E1B package with R DS(on) starting at 9.4mΩ. These highly efficient SiC modules are excellent solutions for electric vehicle (EV) charging stations, energy storage, industrial power supplies and solar power applications.
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WEBQorvo to Showcase Innovations in SPICE Simulation SiC Modules and Battery Management at APEC 2024: 01/31/2024 : Qorvo to Acquire Anokiwave: 01/31/2024 : Qorvo Announces Fiscal 2024 Third Quarter Financial Results: 01/24/2024 : Qorvo Boosts Performance in 750V EV Designs with Industry-leading SiC FET in D2PAK
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